Samsung's advanced institute of technology said it has successfully created a three-terminal active device with a graphene variable barrier, which can effectively cut off electric currents in transistors.

Graphene is a super-strong and flexible material with the potential to be used in next-generation semiconductors and displays. Until now, its inability to cut off electric currents has made its use in transistors impossible.

"If the experimental graphene device is fully developed, it could be used to make transistors with 100 times the computing power of conventional silicon units," the institute said. "It could thus help make better semiconductors and other electronic devices."

The latest breakthrough has been published in the online edition of Science Magazine and nine patents have been secured.

Samsung has invested heavily in research and development in recent years to stay ahead of its competition. The company announced earlier it has started mass production of the world's first 20-nano level low power double data rate two (LPDDR2), 4 gigabit mobile DRAMs.