Diamond is an insulator in the bulk and has both metal and insulator phases on HTD surface. Moreover, since the metal phase on the HTD surface comes from the Mott IMT, HTD is interpreted as an inhomogeneous, topological Mott material. This is early lab work that needs more confirmation, improvement and then scaling.

In conclusion, researchers found that the local metal phase induced by the Mott IMT in HTD reduces resistance of channel in the HTD-based transistor. Finally, the local metal phase leads to high carrier and current densities in the transistor—the Mott transistor that can be used in the following applications: neuromorphic device for neuromorphic computing, RF power amplifier over 10 GHz power transistor with high current, and in devices for non-Boolean computing.