Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, downscaling appears to be challenging owing to high metal-semiconductor contact resistance.

Two-dimensional (2D) nano-materials could be a replacement for conventional CMOS semiconductors for high-speed integrated circuits and very low power usage. CMOS is reaching the physical limits of about 1 nanometer circuits.

Lab performance of these devices has been found to meet the international roadmap for devices and systems (IRDS) requirements for several benchmark metrics.

A doping-free transistor architecture, which exploits an inherent chemical property of MXene to provide intrinsically low-resistive contact at the source and drain terminal. The concept is validated by high-throughput screening of appropriate functional groups and self-consistent quantum transport calculations. Comparison with technology roadmap specifications hints that such a functional-engineered MXene device may provide a technology downscaling solution for 2D transistors. The high-throughput methodology could be extended to multi-metal-layer MXenes, to discover suitable semiconductor-metal combinations for superior performance.